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ISBN13: 978-0201543933

ISBN10: 0201543931

Cover type: Hardback

Edition/Copyright: 96

Publisher: Addison-Wesley Longman, Inc.

Published: 1996

International: No

ISBN10: 0201543931

Cover type: Hardback

Edition/Copyright: 96

Publisher: Addison-Wesley Longman, Inc.

Published: 1996

International: No

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Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost maddening pace. This book should be viewed as a gateway to what the reader will hopefully agree is the fascinating realm of semiconductor devices.

**I. SEMICONDUCTOR FUNDAMENTALS.**

**1. Semiconductors -- A General Introduction. **

General Material Properties.

Crystal Structure.

Crystal Growth.

**2. Carrier Modeling. **

The Quantization Concept.

Semiconductor Models.

Carrier Properties.

State and Carrier Distributions.

Equilibrium Carrier Concentrations.

**3. Carrier Action. **

Drift. Diffusion.

Recombination -- Generation.

Equations of State.

Supplemental Concepts.

**4. Basics of Device Fabrication. **

Fabrication Processes.

Device Fabrication Examples.

**R1. Part I Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part I Review Problem Sets and Answers.

**IIA. PN JUNCTION DIODES.**

**5. PN Junction Electrostatics. **

Preliminaries.

Quantitative Electrostatic Relationships.

**6. PN Junction Diode -- I-V Characteristics. **

The Ideal Diode Equation.

Deviations from the Ideal.

Special Considerations.

**7. PN Junction Diode -- Small-Signal Admittance. **

Introduction. Reverse-Bias Junction Capacitance.

Forward-Bias Diffusion Admittance.

**8. PN Junction Diode -- Transient Response. **

Turn-Off Transient.

Turn-On Transient.

**9. Optoelectronic Diodes. **

Introduction.

Photodiodes.

Solar Cells. LEDs.

**IIB. BJTS AND OTHER JUNCTION DEVICES.**

**10. BJT Fundamentals. **

Terminology.

Fabrication.

Electrostatics.

Introductory Operational Considerations.

Performance Parameters.

**11. BJT Static Characteristics. **

Ideal Transistor Analysis.

Deviations from the Ideal.

Modern BJT Structures.

**12. BJT Dynamic Response Modeling. **

Equivalent Circuits.

Transient (Switching) Response.

**13. PNPN Devices. **

Silicon Controlled Rectifier (SCR).

SCR Operational Theory.

Practical Turn-on/Turn-off Considerations.

Other PNPN Devices.

**14. MS Contacts and Schottky Diodes. **

Ideal MS Contacts.

Schottky Diode.

Practical Contact Considerations.

**R2. Part II Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part II Review Problem Sets and Answers.

**III. FIELD EFFECT DEVICES.**

**15. Field Effect Introduction -- the J-FET and MESFET. **

General Introduction.

J-FET. MESFET.

**16. MOS Fundamentals. **

Ideal Structure Definition.

Electrostatics -- Mostly Qualitative.

Electrostatics -- Quantitative Formulation.

Capacitance-Voltage Characteristics.

**17. MOSFETs -- The Essentials. **

Qualitative Theory of Operation.

Quantitative ID - VD Relationships. ac Response.

**18. Nonideal MOS. **

Metal-Semiconductor Workfunction Difference.

Oxide Charges.

MOSFET Threshold Considerations.

**19. Modern FET Structures. **

Small Dimension Effects.

Select Structure Survey.

**R3. Part III Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part III Review Problem Sets and Answers.

Appendix A. Elements of Quantum Mechanics.

Appendix B. MOS Semiconductor Electrostatics -- Exact Solution.

Appendix C. MOS C-V Supplement.

Appendix D. MOS I-Vsupplement.

Appendix E. List of Symbols.

Appendix M. MATLAB Program Script.

ISBN10: 0201543931

Cover type: Hardback

Edition/Copyright: 96

Publisher: Addison-Wesley Longman, Inc.

Published: 1996

International: No

Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost maddening pace. This book should be viewed as a gateway to what the reader will hopefully agree is the fascinating realm of semiconductor devices.

Table of Contents

**I. SEMICONDUCTOR FUNDAMENTALS.**

**1. Semiconductors -- A General Introduction. **

General Material Properties.

Crystal Structure.

Crystal Growth.

**2. Carrier Modeling. **

The Quantization Concept.

Semiconductor Models.

Carrier Properties.

State and Carrier Distributions.

Equilibrium Carrier Concentrations.

**3. Carrier Action. **

Drift. Diffusion.

Recombination -- Generation.

Equations of State.

Supplemental Concepts.

**4. Basics of Device Fabrication. **

Fabrication Processes.

Device Fabrication Examples.

**R1. Part I Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part I Review Problem Sets and Answers.

**IIA. PN JUNCTION DIODES.**

**5. PN Junction Electrostatics. **

Preliminaries.

Quantitative Electrostatic Relationships.

**6. PN Junction Diode -- I-V Characteristics. **

The Ideal Diode Equation.

Deviations from the Ideal.

Special Considerations.

**7. PN Junction Diode -- Small-Signal Admittance. **

Introduction. Reverse-Bias Junction Capacitance.

Forward-Bias Diffusion Admittance.

**8. PN Junction Diode -- Transient Response. **

Turn-Off Transient.

Turn-On Transient.

**9. Optoelectronic Diodes. **

Introduction.

Photodiodes.

Solar Cells. LEDs.

**IIB. BJTS AND OTHER JUNCTION DEVICES.**

**10. BJT Fundamentals. **

Terminology.

Fabrication.

Electrostatics.

Introductory Operational Considerations.

Performance Parameters.

**11. BJT Static Characteristics. **

Ideal Transistor Analysis.

Deviations from the Ideal.

Modern BJT Structures.

**12. BJT Dynamic Response Modeling. **

Equivalent Circuits.

Transient (Switching) Response.

**13. PNPN Devices. **

Silicon Controlled Rectifier (SCR).

SCR Operational Theory.

Practical Turn-on/Turn-off Considerations.

Other PNPN Devices.

**14. MS Contacts and Schottky Diodes. **

Ideal MS Contacts.

Schottky Diode.

Practical Contact Considerations.

**R2. Part II Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part II Review Problem Sets and Answers.

**III. FIELD EFFECT DEVICES.**

**15. Field Effect Introduction -- the J-FET and MESFET. **

General Introduction.

J-FET. MESFET.

**16. MOS Fundamentals. **

Ideal Structure Definition.

Electrostatics -- Mostly Qualitative.

Electrostatics -- Quantitative Formulation.

Capacitance-Voltage Characteristics.

**17. MOSFETs -- The Essentials. **

Qualitative Theory of Operation.

Quantitative ID - VD Relationships. ac Response.

**18. Nonideal MOS. **

Metal-Semiconductor Workfunction Difference.

Oxide Charges.

MOSFET Threshold Considerations.

**19. Modern FET Structures. **

Small Dimension Effects.

Select Structure Survey.

**R3. Part III Supplement and Review. **

Alternative/Supplemental Reading List.

Figure Sources/Cited References.

Review List of Terms.

Part III Review Problem Sets and Answers.

Appendix A. Elements of Quantum Mechanics.

Appendix B. MOS Semiconductor Electrostatics -- Exact Solution.

Appendix C. MOS C-V Supplement.

Appendix D. MOS I-Vsupplement.

Appendix E. List of Symbols.

Appendix M. MATLAB Program Script.

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